Mitsubishi Electric Ships Two New SBD-embedded SiC-MOSFET Modules
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more
TOKYO–(BUSINESS WIRE)–
Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on March 29, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.
| Product Features | ||
| 1) | Low-current modules suitable for inverters of various output capacities | |
| – | New 3.3kV/400A and 3.3kV/200A versions of Mitsubishi Electric’s SBD-embedded SiC-MOSFET module, together with the existing 3.3kV/800A, comprise the new UnifullTM series. | |
| – | The new low-current modules are suitable for the auxiliary power supplies of rolling stock and relatively small-capacity drive systems, expanding the range of applications for improving the power conversion efficiency of inverters in large industrial equipment with varying power requirements. | |
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Takeyoshi Komatsu
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Mitsubishi Electric Corporation
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